Semiconductor device

A semiconductor device comprising:

• a substrate having a plurality of side surfaces extending in different directions;
• a semiconductor structure disposed on the substrate and including a first-conductive-type semiconductor layer, a second-conductive-type semiconductor layer, and an active layer disposed between the first-conductive-type semiconductor layer and the second-conductive-type semiconductor layer;
• an electrode pad disposed on the substrate and spaced apart from the semiconductor structure;
• and
• a second conductive layer disposed between the semiconductor structure and the electrode pad, and the substrate,
• wherein the electrode pad is disposed in a pad region in which the plurality of side surfaces are in contact with each other and has an outer surface adjacent to the side surfaces and an inner surface adjacent to the semiconductor structure, and
• the semiconductor structure has a first recess passing through the second-conductive-type semiconductor layer and the active layer and disposed in a partial region of the first-conductive-type semiconductor layer, an first edge surface extending along the side surface of the substrate, and a second edge surface extending along the inner surface of the electrode pad, wherein
• the first recess extends along the first edge surface and the second edge surface, and
• the second conductive layer has a first conductive region disposed inside the first recess and a second conductive region extending from the first conductive region to the electrode pad.