US 2019/0198708 A1 · LIGHT EMITTING DIODE EPITAXIAL WAFER AND METHOD FOR MANUFACTURING THE SAME

Abstract

An epitaxial wafer as a light emitting diode (LED) comprises a sapphire substrate, a buffer layer, an N-type semiconductor layer, a light emitting active layer, and a P type semiconductor layer. The buffer layer, the N-type semiconductor layer, the light emitting active layer, and the P type semiconductor layer are formed on C-plane of the sapphire substrate in that order. The light-emitting active layer comprises at least one quantum well structure, with a quantum well region, a gradient region, a high-content aluminum region, and a blocking region. The blocking region covers and is connected to the high-content aluminum region, the P-type semiconductor layer of aluminum-doped or indium-doped gallium nitride covers the gradient region. Content of aluminum or indium changes linearly from side close to the N-type semiconductor layer to side furthest from the N-type semiconductor layer.

Claims17

Dependent claims

A light emitting diode (LED) epitaxial wafer comprising:

a sapphire substrate;
a buffer layer;
an N-type semiconductor layer;
a light emitting active layer;
and
a P-type semiconductor layer;
wherein, the buffer layer, the N-type semiconductor layer, the light emitting active layer, and the P type semiconductor layer are formed on C-plane of the sapphire substrate in that order, wherein the light-emitting active layer comprises at least one quantum well structure, each quantum well structure comprises a quantum well region, a gradient region, a high-content aluminum region, and a blocking region, the blocking region covers and is connected to the high-content aluminum region, the P-type semiconductor layer covers the gradient region and is made of aluminum-doped or indium-doped gallium nitride, a content of aluminum or indium changes linearly from one side close to the N-type semiconductor layer to one side away from the N-type semiconductor layer.

4 more elements

A method for manufacturing a light emitting diode epitaxial wafer comprising:

providing a sapphire substrate;
forming a buffer layer and an N-type semiconductor layer on C-plane of the sapphire substrate in that order;
forming at least one quantum well structure on the N-type semiconductor layer, each quantum well structure comprising a quantum well region, a gradient region, a high-content aluminum region, and a blocking region, the blocking region covering and connecting to the high-content aluminum region, wherein the P-type semiconductor layer covers the gradient region and is made of aluminum-doped or indium-doped gallium nitride, a content of aluminum or indium changes linearly from one side close to the N-type semiconductor layer to one side away from the N-type semiconductor layer;
and
forming a P-type semiconductor layer on the blocking region.

2 more elements

Dependencies are inferred from the claim text.

Light emitting diode epitaxial wafer and method for manufacturing the same

Life of this patent

Light emitting diode epitaxial wafer and method for manufacturing the same

Life of this patent

Abstract

Claims17