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US 2019/0198702 A1Published application
X-ray detector
AssigneeLG Display Co., Ltd.
InventorsJaeHo YOON, ShiHyung PARK, MoonSoo KANG
Life of this patent
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Abstract
An X-ray detector device includes in one example a switching portion and a photodetecting portion connected to the switching portion. The photodetecting portion includes a bottom electrode, a semiconductor area disposed above the bottom electrode, and a top electrode disposed above the semiconductor area. The area of the top electrode is smaller than the area of a top surface of the semiconductor area.
Claims20
An X-ray detector device comprising:
- a switching portion;
- and
- a photodetecting portion connected to the switching portion,
- wherein the photodetecting portion comprises a bottom electrode, a semiconductor area disposed above the bottom electrode, and a top electrode disposed above the semiconductor area, and
- an area of the top electrode is smaller than an area of a top surface of the semiconductor area, and
- wherein a periphery of the top electrode, disposed above the semiconductor area, is located more adjacent to a center of the semiconductor area than a periphery of the semiconductor area.
3 more elements
(canceled)
An X-ray detector device comprising:
- a photodetecting portion including:
- a bottom electrode,
- a top electrode, and
- a semiconductor area disposed between the bottom electrode and the top electrode,
- wherein an area of the top electrode is smaller than an area of a top surface of the semiconductor area, and
- wherein a height of the semiconductor area is approximately equal to a distance between an outermost edge of the top electrode and an outermost edge of the semiconductor area.
3 more elements
An X-ray detector device comprising:
- a photodetecting portion including:
- a bottom electrode,
- a top electrode, and
- a semiconductor area disposed between the bottom electrode and the top electrode,
- wherein an area of the top electrode is smaller than an area of a top surface of the semiconductor area,
- wherein an outermost edge of the top electrode is closer to a center of the semiconductor area than an outermost edge of the semiconductor area,
- wherein a first length between the outermost edge of the top electrode and the outermost edge of the semiconductor area has a specific spatial relationship with a height of the semiconductor area, and
- wherein the specific spatial relationship is a ratio of the first length to the height being between 1:0.8 to 1:1.2.
5 more elements
Dependencies are inferred from the claim text.