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AssigneeSony Corporation
InventorsYuji MASUI, Shingo KANEKO
Estimating the term…
A light receiving element (1) according to an embodiment of the disclosure includes a semiconductor layer (20) in which a photodiode having a PIN structure is provided in a mesa portion having a pillar shape. The photodiode includes a first conductive layer (21), an optical absorption layer (23), and a second conductive layer (24) having a light incident surface. In the light receiving element (1), the semiconductor layer (20) includes, in the vicinity of an interface between the first conductive layer (21) and the optical absorption layer (23), a constricted portion (26) that is the most constricted of the first conductive layer (21). The interface has an end exposed on an internal surface of the constricted portion (26).
A light receiving element comprising a semiconductor layer in which a photodiode is provided in a mesa portion having a pillar shape, the photodiode having a PIN structure that includes a first conductive layer, an optical absorption layer, and a second conductive layer having a light incident surface,
A light receiving element comprising a semiconductor layer in which a photodiode is provided in a mesa portion having a pillar shape, the photodiode having a PN structure that includes a first conductive layer and a second conductive layer having a light incident surface,
An optical communication device comprising one or more light receiving elements,
An optical communication device comprising one or more light receiving elements,
A method for manufacturing a light receiving element, the method comprising an etching process that includes:
A method for manufacturing a light receiving element, the method comprising an etching process that includes:
Dependencies are inferred from the claim text.