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US 2019/0198682 A1Published application
Semiconductor device and manufacturing method thereof
AssigneeMagnaChip Semiconductor, Ltd.
InventorsYong Won LEE, Jin Woo HAN, Dae Won HWANG, Kyung Wook KIM
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Abstract
A semiconductor device includes a substrate, a counter-doping region, and a Schottky barrier diode (SBD) in which a breakdown voltage is improved by using counter doping, and a manufacturing method thereof. A breakdown voltage may be improved by lowering a concentration of impurity on the region and enhancing the characteristics of the semiconductor device including the SBD.
Claims16
A manufacturing method for fabricating a semiconductor device, the method comprising:
- forming a substrate;
- forming a counter doping region in the substrate;
- forming a trench in the substrate;
- forming a BODY region adjacent to the trench;
- and
- forming a WELL region adjacent to the trench.
3 more elements
A manufacturing method for fabricating a semiconductor device, the method comprising:
- forming a substrate having a first conductivity type;
- forming a counter doping region in the substrate by injecting ions having a second conductivity type to form the counter doping region;
- forming trenches in the substrate region;
- forming a BODY region having the second conductivity type adjacent to the trenches;
- and
- forming a WELL region in a Schottky barrier diode (SBD) region in the substrate, the WELL region having the second conductivity type and disposed adjacent to the trenches.
3 more elements
Dependencies are inferred from the claim text.