Integration of input/output device in vertical field-effect transistor technology

A method for fabricating a semiconductor device, comprising:

• forming a vertical field-effect transistor (FET) device and an input/output (IO) FET device, wherein the vertical FET device is formed in a vertical FET device area of a substrate and the IO FET device is formed in an IO FET device area of the substrate, and wherein forming the vertical FET device and the IO FET device further comprises:
• forming a plurality of first fin structures in the vertical FET device area, and at least two second fin structures in the IO FET device area, the at least two second fin structures are separated by a distance associated with a length of a channel connecting the at least two fin structures in the IO FET device area, wherein the length of the channel is determined based on at least one voltage for implementing the IO FET device;
• forming a first spacer on the substrate;
• selectively removing a portion of the first spacer in the IO FET device area to create an exposed portion of the IO FET device area;
• depositing gate material on the fin structures and the exposed portion of the IO FET device area;
• forming an interlayer dielectric (ILD);
• forming a second spacer on the ILD;
• forming respective epitaxial layers above the first and second fin structures;
• forming an ILD cap layer;
• and
• forming a plurality of first contacts in the vertical FET device area and a plurality of second contacts in the IO FET device area.

A semiconductor device, comprising:

• a substrate having a vertical field-effect transistor (FET) device area and an input/output (IO) FET device area;
• a vertical FET device formed in the vertical FET device area;
• and
• an IO FET device formed in the IO FET device area, wherein the IO FET device includes at least two fin structures formed in the IO FET device area, wherein the at least two second fin structures are separated by a distance associated with a length of a channel connecting the at least two fin structures in the IO FET device area, and wherein the length of the channel is determined based on at least one voltage for implementing the IO FET device.