Semiconductor device

A semiconductor device comprising:

• a drift layer formed over a semiconductor substrate;
• a channel layer formed over the drift layer;
• a source region formed over the channel layer;
• a trench penetrating the channel layer to reach the drift layer and contacting the source region;
• a gate insulating film formed over an inner wall of the trench;
• a gate electrode that fills the trench;
• a first semiconductor region formed in a position overlapping a region where the trench is formed as seen from above in the drift layer below the trench and having an impurity of a conductivity type opposite from that of the drift layer;
• and
• a second semiconductor region spaced from the region where the trench is formed as seen from above in the drift layer below the trench and having an impurity of the conductivity type opposite from that of the drift layer,
• wherein the trench extends in a first direction,
• wherein the first semiconductor region is configured by a plurality of first regions arranged at a first space in the first direction, and
• wherein the second semiconductor region extends in the first direction.

A semiconductor device comprising:

• a drift layer formed over a semiconductor substrate;
• a channel layer formed over the drift layer;
• a source region formed over the channel layer;
• a trench penetrating the channel layer to reach the drift layer and contacting the source region;
• a gate insulating film formed over an inner wall of the trench;
• a gate electrode that fills the trench;
• a first semiconductor region formed in a position overlapping a region where the trench is formed as seen from above in the drift layer below the trench and having an impurity of a conductivity type opposite from that of the drift layer;
• and
• a second semiconductor region spaced from the region where the trench is formed as seen from above in the drift layer below the trench and having an impurity of the conductivity type opposite from that of the drift layer,
• wherein the trench extends in a first direction, and
• wherein the first semiconductor region is arranged at a location deeper than the second semiconductor region.