Transistor Having at Least One Transistor Cell with a Field Electrode
AssigneeInfineon Technologies Austria AG
InventorsMarkus Zundel, Franz Hirler
Life of this patent
Estimating the term…
Abstract
Disclosed is a transistor device and a method for producing thereof. The transistor device includes at least one transistor cell, wherein the at least one transistor cell includes: a source region, a body region and a drift region in a semiconductor body; a gate electrode dielectrically insulated from the body region by a gate dielectric; a field electrode dielectrically insulated from the drift region by a field electrode dielectric; and a contact plug extending from a first surface of the semiconductor body to the field electrode and adjoining the source region and the body region.
Claims20
A transistor device comprising at least one transistor cell, wherein the at least one transistor cell comprises:
- a source region, a body region and a drift region in a semiconductor body;
- a gate electrode dielectrically insulated from the body region by a gate dielectric;
- a field electrode dielectrically insulated from the drift region by a field electrode dielectric;
- and
- a contact plug arranged between a first surface of the semiconductor body and the field electrode and adjoining the source region and the body region.
A transistor device comprising at least one transistor cell, wherein the at least one transistor cell comprises:
- a source region, a body region and a drift region in a semiconductor body;
- a gate electrode dielectrically insulated from the body region by a gate dielectric;
- and
- a field electrode dielectrically insulated from the drift region by a field electrode dielectric,
- wherein in a lateral direction of the semiconductor body a shortest distance between the field electrode dielectric and the gate dielectric is smaller than 150 nanometers.
Dependencies are inferred from the claim text.