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US 2019/0198659 A1Published application
Vertical semiconductor device with improved ruggedness
AssigneeCree, Inc.
InventorsDaniel Jenner Lichtenwalner, Edward Robert Van Brunt
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Abstract
A vertical semiconductor device includes a substrate, a buffer layer over the substrate, and a drift layer over the buffer layer. The substrate has a first doping type and a first doping concentration. The buffer layer has the first doping type and a second doping concentration that is less than the first doping concentration. The drift layer has the first doping type and a third doping concentration that is less than the second doping concentration.
Claims20
A vertical semiconductor device comprising:
- a substrate having a first doping type and a first doping concentration;
- a buffer layer on the substrate, the buffer layer having the first doping type and a second doping concentration that is less than the first doping concentration;
- and
- a drift layer on the buffer layer such that the buffer layer is between the substrate and the drift layer in an active region of the vertical semiconductor device, the drift layer having the first doping type and a third doping concentration that is less than the second doping concentration, wherein the substrate, the buffer layer, and the drift layer comprise silicon carbide.
1 more element
A method comprising:
- providing a substrate, the substrate having a first doping type and a first doping concentration;
- providing a buffer layer over the substrate, the buffer layer having the first doping type and a second doping concentration that is less than the first doping concentration;
- and
- providing a drift layer over the buffer layer, the drift layer having the first doping type and a third doping concentration that is less than the second doping concentration, wherein the substrate, the buffer layer, and the drift layer comprise silicon carbide.
1 more element
Dependencies are inferred from the claim text.