Germanium condensation for replacement metal gate devices with silicon germanium channel

Abstract

A semiconductor structure and a method for fabricating the same. The structure includes a substrate and at least one semiconductor fin. The semiconductor structure further includes a channel region within the semiconductor fin. The channel region includes a higher content of germanium than remaining portions of the semiconductor fin. The semiconductor structure also includes a gate stack in contact with the semiconductor fin. The method includes removing a dummy gate formed on at least one semiconductor fin. The removal of the dummy gate exposes a channel region of the semiconductor fin. A germanium dioxide layer is formed in contact with the channel region. A condensation process is performed after the germanium dioxide layer has been formed. The condensation process increases germanium content only in the channel region.

Dependencies are inferred from the claim text.