Semiconductor device
AssigneesKabushiki Kaisha Toshiba, Toshiba Infrastructure Systems & Solutions Corporation
InventorKeiichi MATSUSHITA
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Abstract
A semiconductor device includes a substrate: a first nitride semiconductor layer formed on the substrate; a second nitride semiconductor layer formed on the first nitride semiconductor layer and containing a gallium element; a source electrode and a drain electrode formed on the second nitride semiconductor layer and contacting the second nitride semiconductor layer; a third nitride semiconductor layer formed on the second nitride semiconductor layer and containing an indium element and an aluminum element; and a gate electrode formed on the third nitride semiconductor layer and formed between the source electrode and the drain electrode.
Claims10
A semiconductor device comprising:
- a substrate;
- a first nitride semiconductor layer formed on the substrate;
- a second nitride semiconductor layer formed on the first nitride semiconductor layer and containing a gallium element;
- a source electrode and a drain electrode formed on the second nitride semiconductor layer and being in contact with the second nitride semiconductor layer;
- a third nitride semiconductor layer formed on the second nitride semiconductor layer and containing an indium element and an aluminum element;
- and
- a gate electrode formed on the third nitride semiconductor layer and formed between the source electrode and the drain electrode.
Dependencies are inferred from the claim text.