Semiconductor device and method for forming the same
AssigneeVanguard International Semiconductor Corporation
InventorsHsin-Chih LIN, Shin-Cheng LIN, Yung-Hao LIN
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Abstract
A semiconductor device is provided. The semiconductor device includes a substrate, a first III-V compound layer disposed on the substrate, a second III-V compound layer disposed on the first III-V compound layer, a p-type doped III-V compound layer disposed on the second III-V compound layer, a gate disposed over the p-type doped III-V compound layer, a source and a drain disposed on opposite sides of the gate, and a dielectric layer disposed between the p-type doped III-V compound layer and the gate. A method for forming the above semiconductor device is also provided.
Claims19
A semiconductor device, comprising:
- a substrate;
- a first III-V compound layer disposed on the substrate;
- a second III-V compound layer disposed on the first III-V compound layer;
- a p-type doped III-V compound layer disposed on the second III-V compound layer;
- a gate disposed over the p-type doped III-V compound layer;
- a source and a drain disposed on opposite sides of the gate;
- and
- a dielectric layer disposed between the p-type doped III-V compound layer and the gate, wherein a sidewall of the dielectric layer aligns with a sidewall of the p-type doped III-V compound layer.
(canceled)
A method for forming a semiconductor device, comprising:
- providing a substrate;
- forming a first III-V compound layer on the substrate;
- forming a second III-V compound layer on the first III-V compound layer;
- forming a p-type doped III-V compound layer on the second III-V compound layer;
- forming a dielectric layer on the p-type doped III-V compound layer, wherein a sidewall of the dielectric layer aligns with a sidewall of the p-type doped III-V compound layer;
- forming a gate on the dielectric layer;
- and
- forming a source and a drain on opposite sides of the gate.
13-14. (canceled)
Dependencies are inferred from the claim text.