Semiconductor device

A semiconductor device, comprising:

• a drain portion;
• a source portion;
• a semiconductor laminated body provided between the drain portion and the source portion, the semiconductor laminated body including a plurality of semiconductor layers laminated together, and having at least a first heterojunction and a second heterojunction, the semiconductor laminated body having a two-dimensional electron gas layer adjacent to an interface of the first heterojunction, and a two-dimensional hole gas layer adjacent to an interface of the second heterojunction;
• and
• at least one gate portion located between the drain portion and the source portion, the at least one gate portion extending through the first heterojunction and the second heterojunction of the semiconductor laminated body, wherein:
• the drain portion has a first-conductivity-type drain semiconductor region, and the source portion has a first-conductivity-type source semiconductor region, while each of the at least one gate portion has a second-conductivity-type gate semiconductor region;
• and
• the first-conductivity-type drain semiconductor region of the drain portion and the first-conductivity-type source semiconductor region of the source portion are electrically connected to one of the two-dimensional electron gas layer and the two-dimensional hole gas layer, and the second-conductivity-type gate semiconductor region of each of the at least one gate portion is configured, to be prevented by an insulating region from contacting the one of the two-dimensional electron gas layer and the two-dimensional hole gas layer via p-n junction.

A semiconductor device, comprising:

• a drain portion;
• a source portion;
• a semiconductor laminated body provided between the drain portion and the source portion, the semiconductor laminated body including a plurality of semiconductor layers laminated together, and having at least a first heterojunction and a second heterojunction, the semiconductor laminated body having a two-dimensional electron gas layer adjacent to an interface of the first heterojunction, and a two-dimensional hole gas layer adjacent to an interface of the second heterojunction;
• and
• at least one gate portion located between the drain portion and the source portion, the at least one gate portion extending through the first heterojunction and the second heterojunction of the semiconductor laminated body, wherein
• each of the at least one gate portion has a Schottky electrode including a material that permits Schottky junction between the Schottky electrode and the semiconductor laminated body;
• and
• the drain portion and the source portion are electrically connected to one of the two-dimensional electron gas layer and the two-dimensional hole gas layer, and the Schottky electrode of each of the at least one gate portion is configured to be prevented by an insulating region from contacting the one of the two-dimensional electron gas layer and the two-dimensional hole gas layer via the Schottky junction.

A semiconductor device, comprising:

• a drain portion;
• a source portion;
• and
• a semiconductor laminated body provided between the drain portion and the source portion, the semiconductor laminated body including a plurality of semiconductor layers laminated together, and having at least a first heterojunction and a second heterojunction, the semiconductor laminated body having a two-dimensional electron gas layer adjacent to an interface of the first heterojunction, and a two-dimensional hole gas layer adjacent to an interface of the second heterojunction, wherein:
• the plurality of semiconductor layers of the semiconductor laminated body includes a first semiconductor layer located closest to a top surface of the semiconductor laminated body, and a second semiconductor layer located closest to a rear surface of the semiconductor laminated body;
• the first semiconductor layer has a thickness that is smaller than a distance between the two-dimensional electron gas layer and the two-dimensional hole gas layer located next to each other in the semiconductor laminated body;
• and
• the second semiconductor layer has a thickness that is smaller than the distance between the two-dimensional electron gas layer and the two-dimensional hole gas layer located next to each other in the semiconductor laminated body.