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US 2019/0198651 A1Published application
High-electron-mobility transistor devices
AssigneeVishay-Siliconix
InventorsAyman SHIBIB, Kyle TERRILL
Life of this patent
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Abstract
A device includes a first high electronic mobility transistor (HEMT) and a second HEMT. The first HEMT includes a first gate, a source coupled to the first gate, and a drain coupled to the first gate. The second HEMT includes a second gate coupled to the source and to the drain. The second HEMT has a lower threshold voltage than the first HEMT.
Claims20
A device, comprising:
- a first high electronic mobility transistor (HEMT) comprising:
- a first gate;
- a source coupled to the first gate;
- and
- a drain coupled to the first gate;
- a second HEMT comprising:
- a second gate coupled to the source and to the drain;
- a layer comprising gallium;
- a first region disposed between the first gate and the layer comprising gallium, wherein the first region comprises a first dose of an implant material;
- and
- a second region disposed between the second gate and the layer comprising gallium, wherein the second region comprises a second dose of the implant material and wherein the second dose is less than the first dose;
- wherein the second HEMT has a lower threshold voltage than the first HEMT.
9 more elements
A device, comprising:
- a first high electronic mobility transistor (HEMT) comprising:
- a first gate;
- a source coupled to the first gate;
- and
- a drain coupled to the first gate;
- a second HEMT comprising:
- a second gate coupled to the source and to the drain;
- a layer comprising gallium;
- a first region disposed between the first gate and the layer comprising gallium, wherein the first region comprises a first thickness of an insulating material;
- and
- a second region disposed between the second gate and the layer comprising gallium, wherein the second region comprises a second thickness of an insulating material and wherein the second thickness is less than the first thickness;
- wherein the second HEMT has a lower threshold voltage than the first HEMT.
9 more elements
A method for fabricating a high electron mobility transistor (HEMT) device, the method comprising:
- forming a first HEMT on a substrate, the first HEMT comprising a first gate, a source coupled to the first gate, and a drain coupled to the first gate;
- and
- forming a second HEMT on the substrate, the second HEMT comprising a second gate coupled to the source and to the drain;
- wherein the second HEMT has a lower threshold voltage than the first HEMT.
1 more element
Dependencies are inferred from the claim text.