Vertical bipolar transistors

A vertical bipolar transistor comprising:

• a substrate including a first well of a first conductivity type and a second well of a second conductivity type, the second conductivity type being different from the first conductivity type, the first well adjoining the second well;
• a first conductive region in the first well, the first conductive region having the second conductivity type, the first conductive region configured to serve as a emitter of the vertical bipolar transistor;
• a first fin extending from the first well of the substrate, the first fin laterally spaced apart from the first conductive region, the first fin including a second conductive region at a top portion thereof, the second conductive region having the first conductivity type;
• a second fin extending from the second well of the substrate, the second fin including a third conductive region at a top portion thereof, the third conductive region having the second conductivity type;
• at least one sub-base region in the first well, the at least one sub-base region having the first conductivity type, the at least one sub-base region aligned with respect to the first fin and laterally spaced apart from the first conductive region, the second conductive region and the at least one sub-base region collectively configured to serve as a base of the vertical bipolar transistor;
• and
• at least one sub-collector region in the second well, the at least one sub-collector region having the second conductivity type, the at least one sub-collector region aligned with respect to the second fin and laterally spaced apart from the at least one sub-base region, the third conductive region and the at least one sub-collector region collectively configured to serve as a collector of the vertical bipolar transistor.

A vertical bipolar transistor comprising:

• a first fin and a second fin extending from a first well of a substrate, the first well having a first conductivity type, the first fin and the second fin being spaced apart from each other, the first fin including a first conductive region having a second conductivity type at a top portion thereof, the second fin including a second conductive region having the first conductivity type at a top portion thereof, the first and second conductivity types being opposite to each other;
• a third fin extending from a second well of the substrate, the second well having a second conductivity type, the second well adjoining the first well, the third fin including a third conductive region having the second conductivity type at a top portion thereof;
• an emitter region of the vertical bipolar transistor including,
• the first conductive region, and
• at least one sub-emitter region in the first well and having the second conductivity type, the at least one sub-emitter region laterally aligned with respect to the first fin, the first conductive region and the at least one sub-emitter region collectively configured to serve as an emitter of the vertical bipolar transistor;
• a base region of the vertical bipolar transistor including,
• the second conductive region, and
• at least one sub-base region in the first well and having the first conductivity type, the at least one sub-base region laterally aligned with respect to the second fin, the second conductive region and the at least one sub-base region collectively configured to serve as a base of the vertical bipolar transistor;
• and
• a collector region of the vertical bipolar transistor including,
• the third conductive region, and
• at least one sub-collector region in the second well and having the second conductivity type, the at least one sub-collector region laterally aligned with respect to the third fin, the third conductive region and the at least one sub-collector region collectively configured to serve as a collector of the vertical bipolar transistor.