Stacked silicon nanotubes
AssigneeInternational Business Machines Corporation
InventorsJuntao Li, Kangguo Cheng, Choonghyun Lee, Peng Xu
Life of this patent
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Abstract
Embodiments of the present invention are directed to a method that incorporates a germanium pull-out process to form semiconductor structures having stacked silicon nanotubes. In a non-limiting embodiment of the invention, a sacrificial layer is formed over a substrate. The sacrificial layer includes a first type of semiconductor material. A pull-out layer is formed on the sacrificial layer. The first type of semiconductor material from the sacrificial layer is removed to form a silicon-rich layer on a surface of the sacrificial layer. The sacrificial layer can be removed such that the silicon-rich layer defines a silicon nanotube.
Claims20
A method for forming a semiconductor device, the method comprising:
- forming one or more stacked nanowires comprising a sacrificial material over a substrate, the sacrificial material comprising a first type of semiconductor material;
- forming a pull-out layer around each of the one or more stacked nanowires;
- reacting the pull-out layer with the first type of semiconductor material to form a silicon-rich layer on a surface of each of the one or more stacked nanowires;
- and
- removing the sacrificial material to release one or more hollow nanotubes comprising the silicon-rich layer.
(canceled)
A method for forming a semiconductor device, the method comprising:
- forming a semiconductor layer on a substrate;
- forming a sacrificial layer on the semiconductor layer, the sacrificial layer comprising silicon germanium;
- patterning the semiconductor layer and the sacrificial layer into one or more fins in a first region of the substrate;
- removing portions of the semiconductor layer in the first region such that a portion of the sacrificial layer in the first region defines a nanowire;
- forming a pull-out layer around the nanowire in the first region;
- annealing the semiconductor device to remove germanium from a surface of the nanowire such that the surface of the nanowire becomes silicon-rich;
- and
- removing the sacrificial layer such that the silicon-rich surface remains and defines a hollow silicon nanotube.
(canceled)
A semiconductor device comprising:
- one or more stacked silicon nanotubes formed over a substrate;
- a dielectric core formed in each of the one or more stacked silicon nanotubes;
- and
- a gate wrapping around a channel region of each of the one or more stacked silicon nanotubes.
Dependencies are inferred from the claim text.