Semiconductor Devices and Methods of Manufacturing the Same
AssigneeSamsung Electronics Co., Ltd.
InventorsChangwoo Noh, Munhyeon Kim, Hansu Oh, Sungman Whang, Dongwon Kim
Life of this patent
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Abstract
Semiconductor devices and methods of fabricating the same are provided. The method includes forming on a substrate an active pattern that protrudes from the substrate and extends in one direction; forming on the active pattern a sacrificial gate structure that extends in a direction intersecting the active pattern; forming on a side surface of the sacrificial gate structure a first spacer including a first portion at a lower level than a top surface of the active pattern and a second portion on the first portion, and reducing a thickness of the second portion of the first spacer.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- forming an active pattern on a substrate, the active pattern protruding from the substrate and extending in a first direction;
- forming a sacrificial gate structure on the active pattern, the sacrificial gate structure extending in a second direction and the second direction intersecting the first direction of the active pattern;
- forming a first spacer on a side surface of the sacrificial gate structure, the first spacer including a first portion and a second portion, the first portion having a surface at a lower level than an upper surface of the active pattern and the second portion being on the first portion;
- and
- decreasing a thickness of the second portion of the first spacer.
A semiconductor device, comprising:
- a substrate having an active region;
- and
- a transistor on the active region of the substrate,
- wherein the transistor comprises:
- a channel pattern extending in a first direction on the substrate;
- a gate electrode crossing over the channel pattern in a second direction;
- a dielectric layer between the channel pattern and the gate electrode;
- and
- a first spacer covering a side surface of the gate electrode,
- wherein the first spacer comprises a first portion at a lower level than a top surface of the channel pattern and a second portion on the first portion;
- and
- wherein a thickness of the second portion is less than a thickness of the first portion.
A semiconductor device, comprising:
- an active pattern protruding from a substrate and extending in a first direction;
- a gate electrode running across the active pattern in a second direction;
- a first spacer on a side surface of the gate electrode and disposed at a lower level than a top surface of the active pattern;
- and
- a second spacer on the side surface of the gate electrode and on the first spacer,
- wherein a dielectric constant of the second spacer is less than a dielectric constant of the first spacer.
Dependencies are inferred from the claim text.