Back to results
US 2019/0198634 A1Published application
Semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsTatsuo SHIMIZU, Hisashi Saito
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a semiconductor region, a gate electrode, and a first gate insulating film provided between the semiconductor region and the gate electrode and containing a material having a chemical composition expressed by (SiO2)n (Si3N4)m (wherein n and m are positive integers), in the material, at least one silicon atom being bonded with at least one oxygen atom and at least one nitrogen atom.
Claims8
A semiconductor device comprising:
- a semiconductor region;
- a gate electrode;
- and
- a first gate insulating film provided between the semiconductor region and the gate electrode, the first gate insulating film containing a first material having a chemical composition expressed (Si3N4)n(Al2O3)m (wherein n and m are positive integers), at least one silicon atom or one aluminum atom included in the first material being bonded with at least one oxygen atom and at least one nitrogen atom.
1 more element
Dependencies are inferred from the claim text.