Semiconductor structure and method for forming the same
AssigneeVanguard International Semiconductor Corporation
InventorsShih-Chieh CHIEN, Manoj KUMAR, Chia-Hao LEE, Chih-Cherng LIAO
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Abstract
A semiconductor structure is provided. The semiconductor structure includes a semiconductor substrate, a gate trench in the semiconductor substrate, a gate dielectric layer disposed on sidewalls of the gate trench, a gate trench extending portion under the gate trench, an insulating stud disposed in the gate trench extending portion, a gate electrode disposed in the gate trench and on the insulting stud, a doping well region embedded in the semiconductor substrate at opposite sides of the gate trench, and a source region disposed on the doping well region in the semiconductor substrate.
Claims18
A semiconductor structure, comprising:
- a semiconductor substrate;
- a gate trench in the semiconductor substrate;
- a gate dielectric layer disposed on sidewalls of the gate trench;
- a gate trench extending portion under the gate trench;
- an insulating stud disposed in the gate trench extending portion;
- a gate electrode disposed in the gate trench and on the insulating stud;
- a doping well region embedded in the semiconductor substrate at opposite sides of the gate trench;
- and
- a source region disposed on the doping well region in the semiconductor substrate,
- wherein the insulating stud has an upper surface and a bottom surface, the upper surface and the bottom surface of the insulating stud are substantially flat, and an area of the upper surface is substantially equal to an area of the bottom surface.
A method of forming a semiconductor structure, comprising:
- providing a semiconductor substrate;
- forming a gate trench in the semiconductor substrate;
- forming a gate dielectric layer on sidewalls of the gate trench;
- recessing the gate trench to form a gate trench extending portion under the gate trench;
- forming an insulating stud in the gate trench extending portion;
- forming a gate electrode in the gate trench and on the insulating stud;
- forming a doping well region in the semiconductor substrate at opposite sides of the gate trench;
- and
- forming a source region on the doping well region in the semiconductor substrate.
Dependencies are inferred from the claim text.