Semiconductor device and method of manufacturing same

Abstract

To provide a semiconductor device capable of preventing short circuit between first and second gate electrodes. The semiconductor device has a semiconductor substrate, gate insulating film, first gate electrode, stacked film, and second gate electrode. The semiconductor substrate has a first surface including a first region and a second region adjacent thereto. The gate insulating film is placed on the semiconductor substrate in the first region. The first gate electrode is placed on the gate insulating film and has a side surface. The stacked film has a first oxide film on the second region and on the side surface of the first gate electrode, a nitride film on the first oxide film, and a second oxide film on the nitride film. The second gate electrode is placed on the stacked film in the second region. The side surface above the second gate electrode includes a protrusion toward the side of the second gate electrode.

Dependencies are inferred from the claim text.