Back to results
US 2019/0198631 A1Published application
Memory cell structures
AssigneeMicron Technology, Inc.
InventorArup Bhattacharyya
Life of this patent
Estimating the term…
Abstract
In an example, a memory cell may have an interface dielectric adjacent to a semiconductor, a tunnel dielectric adjacent to the interface dielectric, a charge trap adjacent to the tunnel dielectric, a blocking dielectric adjacent to the charge trap, and a control gate adjacent to the blocking dielectric.
Claims20
A memory cell, comprising:
- an interface dielectric adjacent to a semiconductor;
- a first storage dielectric adjacent to the interface dielectric;
- a tunnel dielectric adjacent to the first storage dielectric;
- a charge trap adjacent to the tunnel dielectric;
- a second storage dielectric adjacent to the charge trap;
- a blocking dielectric adjacent to the second storage dielectric;
- and
- a control gate adjacent to the blocking dielectric.
5 more elements
A method of forming a memory cell, comprising:
- forming an interface dielectric adjacent to a semiconductor;
- forming a first storage dielectric adjacent to the interface dielectric;
- forming a tunnel dielectric adjacent to the first storage dielectric;
- forming a charge trap adjacent to the tunnel dielectric;
- forming a second storage dielectric adjacent to the charge trap;
- forming a blocking dielectric adjacent to the second storage dielectric;
- and
- forming a control gate adjacent to the blocking dielectric.
5 more elements
A memory cell, comprising:
- a dielectric stack adjacent to a semiconductor;
- and
- a control gate adjacent to the dielectric stack such that the dielectric stack is between the control gate and the semiconductor;
- wherein the dielectric stack comprises:
- a first storage dielectric;
- a tunnel dielectric adjacent to the first storage dielectric;
- a charge trap adjacent to the tunnel dielectric such that the tunnel dielectric is between the charge trap and the first storage dielectric;
- and
- a second storage dielectric adjacent to the charge trap such that the charge trap is between second storage dielectric and the tunnel dielectric.
6 more elements
Dependencies are inferred from the claim text.