Wide Band Gap Semiconductor Device and a Method for Forming a Wide Band Gap Semiconductor Device

A wide band gap semiconductor device, comprising:

• a first doping region of a first conductivity type;
• and
• a second doping region of a second conductivity type,
• wherein a drift portion of the second doping region has a first average net doping concentration lower than 1e17 cm−3,
• wherein a highly doped portion of the second doping region has a second average net doping concentration higher than 5e18 cm−3,
• wherein a compensation portion of the second doping region is located between the drift portion and the highly doped portion,
• wherein the compensation portion extends from a first area of the compensation portion having a net doping concentration higher than 1e16 cm−3 and lower than 1e17 cm−3 to a second area of the compensation portion having a net doping concentration higher than 5e18 cm−3,
• wherein a maximum gradient of the net doping concentration within at least a part of the compensation portion (106) extending from the second area towards the first area for at least 100 nm is lower than 5e22 cm−4.