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US 2019/0198620 A1Published application
Silicon carbide mosfet inverter circuit
AssigneeFuji Electric Co., Ltd.
InventorTakumi FUJIMOTO
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Abstract
An inverter circuit is connected serially with a first silicon carbide MOSFET and a second silicon carbide MOSFET. During a dead time when the first silicon carbide MOSFET and the second silicon carbide MOSFET are OFF, transient current of at least 100 A/cm2 flows in a built-in diode of the first silicon carbide MOSFET and a built-in diode of the second silicon carbide MOSFET.
Claims4
A silicon carbide MOSFET inverter circuit comprising:
- a first silicon carbide MOSFET;
- a second silicon carbide MOSFET;
- and
- an inverter circuit to which the first silicon carbide MOSFET and the second silicon carbide MOSFET are connected serially, wherein
- transient current flows in a built-in diode of the first silicon carbide MOSFET and in a built-in diode of the second silicon carbide MOSFET during a dead time when the first silicon carbide MOSFET and the second silicon carbide MOSFET are OFF, the transient current causing light to be emitted from the built-in diode of the first silicon carbide MOSFET and the built-in diode of the second silicon carbide MOSFET, the light releasing holes present at an interface of an oxide film and a silicon carbide layer of the first silicon carbide MOSFET and at an interface of an oxide film and a silicon carbide layer of the second silicon carbide MOSFET.
2 more elements
Dependencies are inferred from the claim text.