Semiconductor device, inverter circuit, driving device, vehicle, and elevator

A semiconductor device comprising:

• a silicon carbide layer having a first plane and a second plane, the silicon carbide layer having an off angle of the first plane of no more than 8 degrees with respect to a (000-1) face;
• a first electrode located on a side of the first plane of the silicon carbide layer;
• a second electrode located on a side of the second plane of the silicon carbide layer;
• a trench existing in the silicon carbide layer, the trench having a first side face, a second side face, and a bottom face between the first side face and the second side face;
• a first silicon carbide region of a first conductivity type located in the silicon carbide layer and in contact with the first side face;
• a second silicon carbide region of a second conductivity type located in the silicon carbide layer, the second silicon carbide region located between the first silicon carbide region and the first plane, and the second silicon carbide region being in contact with the first side face;
• a third silicon carbide region of a second conductivity type located in the silicon carbide layer, the third silicon carbide region located between the first silicon carbide region and the first plane, the trench is located between the third silicon carbide region and the second silicon carbide region;
• a fourth silicon carbide region of a first conductivity type located in the silicon carbide layer, the fourth silicon carbide region located between the second silicon carbide region and the first plane, and the fourth silicon carbide region being in contact with the first side face;
• a fifth silicon carbide region of a first conductivity type located in the silicon carbide layer, and the fifth silicon carbide region located between the third silicon carbide region and the first plane, the trench is located between the fifth silicon carbide region and the fourth silicon carbide region;
• a sixth silicon carbide region of a second conductivity type located in the silicon carbide layer and the sixth silicon carbide region being in contact with the second side face and the bottom face;
• a gate electrode located between the first side face and the second side face;
• and
• a gate insulating layer located between the gate electrode and the second silicon carbide region,
• wherein the first side face has a first region that is in contact with the second silicon carbide region and has a first inclination angle with respect to the first plane,
• an off angle of the first region with respect to a {0-33-8} face is no more than 2 degrees, and
• a second inclination angle of the second side face with respect to the first plane is larger than the first inclination angle.