Quantum dot devices with single electron transistor detectors

A method of manufacturing a quantum dot device, comprising:

• providing a quantum dot formation region on a substrate;
• forming a group of gates on the quantum dot formation region;
• forming a single electron transistor (SET) on the quantum dot formation region, proximate to the group of gates;
• wherein the group of gates is at least partially disposed in a trench in insulating material disposed on the quantum dot formation region or wherein the quantum dot formation region includes a quantum well layer in a fin that has insulating material disposed on opposite faces of the fin.

A quantum computing device, comprising:

• a quantum processing device including a plurality of groups of gates to generate quantum dots in a quantum well stack, wherein individual groups of gates are at least partially disposed in a trench in insulating material disposed on the quantum well stack or wherein the quantum well stack is included in a fin having insulating material disposed on opposite faces, and wherein the quantum processing device further includes a plurality of single electron transistors (SETs) proximate to the plurality of groups of gates to detect quantum states of the quantum dots;
• a non-quantum processing device, coupled to the quantum processing device, to control voltages applied to the plurality of groups of gates and to the plurality of SETs;
• and
• a memory device to store data generated by the plurality of SETs during operation of the quantum processing device.