Method of fabrication of a semiconductor device including one or more nanostructures

Abstract

A method of fabrication of a semiconductor device including the implementation of the following steps: fabrication of a stack including at least one first portion of a first semiconductor and at least one second portion of a second semiconductor which is different from the first semiconductor, such that the thickness of at least the first portion is substantially equal to the thickness of at least one nanostructure intended to be made; and thermal treatment of the stack at a temperature which causes surface migration of atoms of the second semiconductor of the second portion towards at least one part of the first portion which exhibits at least one free surface and at which the nanostructure containing at least atoms of the second semiconductor is formed.

Dependencies are inferred from the claim text.