Buried Trench Isolation in Integrated Circuits
AssigneeCypress Semiconductor Corporation
InventorsRinji Sugino, Lei Xue, Ching-Huang LU, Simon S. Chan
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Abstract
A system and method for providing electrical isolation between closely spaced devices in a high density integrated circuit (IC) are disclosed herein. An integrated circuit (IC) comprising a substrate, a first device, a second device, and a buried trench in the substrate and a method of fabricating the same are also discussed. The buried trench is positioned between first and second devices and may be filled with dielectric material. Alternatively, the buried trench contains air. A method of using Hydrogen annealing to create the buried trench is disclosed.
Claims16
1-4. (canceled)
An integrated circuit (IC), comprising:
- a substrate;
- a first device and a second device formed over a surface of the substrate;
- an isolator arranged to isolate the first device and the second device from one another, wherein the isolator comprises at least one dielectric layer completely buried in the substrate, and wherein the isolator is positioned between the first and second devices;
- and
- a seed material disposed at least on top of the at least one dielectric layer and the surface of the substrate, wherein the seed material is configured to smooth a reshaping of the substrate over the isolator.
A semiconductor apparatus, comprising:
- first and second devices formed over a substrate;
- and
- an isolation region disposed at least partly within the substrate and between the first and second devices, wherein the isolation region includes a dielectric layer and a seed layer disposed on top of the dielectric layer and a top surface of the substrate, and wherein the seed layer includes at least one of silicon or germanium.
An isolation structure, comprising:
- a trench formed within a substrate;
- a dielectric layer filling at least a bottom portion of the trench;
- and
- a seed layer disposed over a top surface of the dielectric layer and a top surface of the substrate, wherein the seed layer is configured to smooth a reshaping of the substrate over the dielectric layer.
Dependencies are inferred from the claim text.