Transistor Arrangement and Method of Producing Thereof

A transistor arrangement, comprising:

• a layer stack comprising a plurality of first semiconductor layers of a first doping type and a plurality of second semiconductor layers of a second doping type complementary to the first doping type;
• a first source region of a first transistor device adjoining the plurality of first semiconductor layers;
• a first drain region of the first transistor device adjoining the plurality of second semiconductor layers and spaced apart from the first source region in a first direction;
• a plurality of gate regions of the first transistor device, wherein each of the plurality of gate regions adjoins at least one of the plurality of second semiconductor layers, is arranged between the first source region and the first drain region, and is spaced apart from the first source region and the first drain region;
• a third semiconductor layer adjoining the layer stack and each of the first source region, the first drain region, and the plurality of gate regions;
• and
• active regions of a second transistor device integrated in the third semiconductor layer in a second region that is spaced apart from a first region of the third semiconductor layer, the first region being bordered by the first source region and the first drain region and having the second doping type.