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US 2019/0198608 A1Published application
Silicon carbide-based transistor and method for manufacturing the same
AssigneeSogang University Research Foundation
InventorsKwang Soo KIM, Dong Woo BAE
Life of this patent
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Abstract
Disclosed is a transistor including a substrate, first and second type wells in contact with each other on the substrate; and a breakdown voltage improving region including vertical high concentration doped regions according to first and second types vertically in contact from upper surfaces of the first and second type wells to an upper surface of the substrate in a portion where the first and second type wells are in contact with each other.
Claims20
A transistor comprising:
- a substrate:
- first and second type wells in contact with each other on the substrate;
- and
- a breakdown voltage improving region including vertical high concentration doped regions according to first and second types vertically in contact from upper surfaces of the first and second type wells to an upper surface of the substrate in a portion where the first and second type wells are in contact with each other.
1 more element
A transistor comprising;
- a substrate;
- an upper structure;
- first and second type wells in contact with each other between the substrate and the upper structure;
- and
- a breakdown voltage improving region including vertical high concentration doped regions according to first and second types vertically in contact from an upper surface of the substrate to a lower surface of the upper structure in a portion where the first and second type wells are in contact with each other.
2 more elements
A method for manufacturing a transistor, the method comprising:
- preparing a substrate;
- forming first and second type wells in contact with each other on the substrate;
- and
- forming a breakdown voltage improving region including vertical high concentration doped regions according to first and second types vertically in contact from upper surfaces of the first and second type wells to an upper surface of the substrate in a portion where the first and second type wells are in contact with each other.
1 more element
Dependencies are inferred from the claim text.