3d vertical memory array cell structures with individual selectors and processes

A 3D vertical memory array structure formed by performing operations comprising:

• forming an array stack comprising alternating insulator layers and sacrificial layers;
• forming a hole through the array stack;
• filling the hole with a metal forming a first conductor;
• removing the sacrificial layers of the array stack to expose surfaces of the metal between the insulator layers;
• performing a metal-oxidation process on the surfaces of the metal to form selector devices;
• depositing resistive material or phase-change material on the selector devices and exposed surfaces of the insulator layers and leaving gaps between the insulator layers;
• and
• filling the gaps with a second conductor material.

A 3D vertical memory array structure, comprising:

• an array stack having alternating metal layers and insulator layers, and wherein the array stack includes a hole that exposes internal surfaces of the metal layers and internal surfaces of the insulator layers;
• metal-oxidation on the internal surfaces of the metal layers that forms selector devices on the internal surfaces of the metal layers;
• one of resistive material or phase-change material within the hole and coupled to the selector devices, and wherein the hole is reduced to a smaller hole;
• and
• conductor material in the smaller hole and coupled to the resistive material or the phase-change material.