Monolithic segmented led array architecture with islanded epitaxial growth
AssigneeLumileds LLC
InventorsAshish TANDON, Rajat SHARMA, Joseph Robert FLEMISH, Andrei PAPOU, Wen YU, Erik YOUNG, Yu-Chen SHEN, Luke GORDON
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Abstract
A device may include a metal contact between a first isolation region and a second isolation region on a first surface of an epitaxial layer. The device may include a first sidewall and a second sidewall on a second surface of the epitaxial layer distal to the first isolation region and the second isolation region. The device may include a wavelength converting layer on the epitaxial layer between the first sidewall and the second sidewall.
Claims20
A device comprising:
- a metal contact between a first isolation region and a second isolation region on a first surface of an epitaxial layer;
- a first sidewall and a second sidewall on a second surface of the epitaxial layer distal to the first isolation region and the second isolation region;
- and
- a wavelength converting layer on the epitaxial layer between the first sidewall and the second sidewall.
A light emitting diode (LED) array, comprising:
- an isolation region between a first metal contact on a first LED and a second metal contact on a second LED;
- one or more sidewalls on the first LED and on the second LED, the one or more sidewalls distal to the isolation region;
- and
- a wavelength converting layer on the first LED and the second LED between the one or more sidewalls.
A method of forming a device, the method comprising:
- forming a metal contact between a first isolation region and a second isolation region on a first surface of an epitaxial layer;
- and
- forming a wavelength converting layer on a second surface of the epitaxial layer between the first sidewall and the second sidewall, the first surface distal to the second surface.
Dependencies are inferred from the claim text.