Multi-Color Monolithic Light-Emitting Diodes and Methods for Making the Same

An apparatus, comprising a light emitting device produced using a process for producing a light emitting diode (LED) device, the process comprising:

• forming a plurality of quantum dots on a surface of a layer comprising a first area and a second area, the forming of the plurality of quantum dots comprising:
• exposing the first area of the surface to light having a first wavelength while exposing the first area to a quantum dot forming environment that, due at least in part to an interaction between the light at the first wavelength and the quantum dots, causes the quantum dots in the first area to form at a first growth rate while the quantum dots have a dimension less than a first threshold dimension, and at a second growth rate while the quantum dots have a dimension at or greater than the first threshold dimension, the first growth rate being higher than the second growth rate;
• exposing the second area of the surface to light having a second wavelength longer than the first wavelength while exposing the second area to the quantum dot forming environment that, due at least in part to an interaction between the light at the second wavelength and the quantum dots, causes the quantum dots in the second area to form at a third growth rate while the quantum dots have a dimension less than a second threshold dimension, and at a fourth growth rate while the quantum dots have a dimension at or greater than the second threshold dimension, the second threshold dimension being larger than the first threshold dimension, and the third growth rate being higher than the fourth growth rate;
• and
• processing the layer to form the LED device,
• wherein the quantum dots in the first area are sized to emit light substantially within a first band of wavelengths and the quantum dots in the second area are sized to emit light substantially within a second band of wavelengths different from the first band of wavelengths.

A light emitting diode (LED) device, comprising:

• a base layer;
• a first quantum dot region supported by the base layer, the first quantum dot region comprising a first plurality of quantum dots having a first dimension;
• and
• a second quantum dot region supported by the base layer, the second quantum dot region comprising a second plurality of quantum dots having a second dimension different from the first dimension,
• wherein the first quantum dot region and the second quantum dot region are disposed on a common plane parallel to the base layer, and
• wherein the first quantum dot region and the second quantum dot region are non-overlapping regions.