Pixel having two semiconductor layers, image sensor including the pixel, and image processing system including the image sensor
AssigneeSamsung Electronics Co., Ltd.
InventorJUNG-CHAK AHN
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Abstract
An image sensor having pixels that include two patterned semiconductor layers. The top patterned semiconductor layer contains the photoelectric elements of pixels having substantially 100% fill-factor. The bottom patterned semiconductor layer contains transistors for detecting, resetting, amplifying and transmitting signals charges received from the photoelectric elements. The top and bottom patterned semiconductor layers may be separated from each other by an interlayer insulating layer that may include metal interconnections for conducting signals between devices formed in the patterned semiconductor layers and from external devices.
Claims21
(canceled)
An image sensor, comprising:
- a first semiconductor layer comprising a reset transistor and a source follower transistor;
- and
- a second semiconductor layer disposed on the first semiconductor layer,
- wherein the second semiconductor layer comprises a photodiode, and the photodiode is electrically connected to the reset transistor and the source follower transistor.
An image sensor, comprising:
- a first layer;
- a second layer arranged in parallel with the first layer;
- at least one transistor disposed in the first layer;
- a photodiode disposed in the second layer;
- a first conductive plug disposed in the first layer and coupled to the at least one transistor;
- and
- a second conductive plug disposed in the second layer and coupled to the photodiode,
- wherein the first and second conductive plugs are electrically coupled to each other.
An image sensor, comprising:
- a pixel array comprising a plurality of pixels, wherein each pixel comprises:
- a photoelectric conversion unit;
- a transfer unit configured to transfer charges generated in the photoelectric conversion unit to a floating node;
- a reset unit configured to set an electric potential of the floating node to a reference electric potential;
- and
- an amplifying unit configured to amplify a signal generated based on the charges transferred to the floating node,
- wherein the photoelectric conversion unit, the transfer unit, and the floating node are disposed on a first substrate, and the reset unit and the amplifying unit are disposed on a second substrate,
- wherein the reset unit and the amplifying unit are coupled to the floating node.
Dependencies are inferred from the claim text.