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US 2019/0198554 A1Published application
Low dark current backside illumination sensor
AssigneeInternational Business Machines Corporation
InventorsTakashi Ando, Choonghyun Lee
Life of this patent
Estimating the term…
Abstract
Light sensors and methods of making the same include a photodiode and a hole accumulation layer directly on a sensing surface of the photodiode. A metal oxide layer is formed over the hole accumulation layer. An anti-reflection layer is formed over the metal oxide layer.
Claims20
A light sensor, comprising:
- a photodiode;
- a hole accumulation layer epitaxially grown from a sensing surface of the photodiode;
- a metal oxide layer over the hole accumulation layer;
- and
- an anti-reflection layer over the metal oxide layer.
2 more elements
(canceled)
A method of forming a light sensor, comprising:
- epitaxially growing a hole accumulation layer from a sensing surface of a photodiode;
- depositing a metal oxide layer over the hole accumulation layer;
- and
- depositing an anti-reflection layer over the metal oxide layer.
1 more element
(canceled)
A method of forming a light sensor, comprising:
- epitaxially growing a hole accumulation layer on a sensing surface of a photodiode that comprises germanium at a concentration of at least 80%;
- depositing an aluminum metal oxide layer over the hole accumulation layer using atomic layer deposition;
- depositing an anti-reflection layer over the metal oxide layer;
- forming an opaque light shield layer on the anti-reflection layer having a gap over the photodiode;
- and
- depositing an encapsulating layer over the anti-reflection layer and the light shield layer.
3 more elements
Dependencies are inferred from the claim text.