Light-receiving device, method of manufacturing light-receiving device, imaging device, and electronic apparatus
AssigneeSony Semiconductor Solutions Corporation
InventorJun YOSHIGIWA
Life of this patent
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Abstract
Provided is a light-receiving device including: a photoelectric conversion layer including a Group III-V semiconductor; a plurality of first electrically conductive type regions in signal charges generated in the photoelectric conversion layer move; and a second electrically-conductive type region penetrating through the photoelectric conversion layer and provided between adjacent ones of the first electrically-conductive type regions.
Claims16
A light-receiving device comprising:
- a photoelectric conversion layer including a Group III-V semiconductor;
- a plurality of first electrically-conductive type regions in which signal charges generated in the photoelectric conversion layer move;
- and
- a second electrically-conductive type region penetrating through the photoelectric conversion layer and provided between adjacent ones of the first electrically-conductive type regions.
An imaging device comprising:
- a photoelectric conversion layer provided common to a plurality of pixels and including a Group III-V semiconductor;
- first electrically-conductive type regions each of which is provided for a corresponding one of the pixels, and in which signal charges generated in the photoelectric conversion layer move;
- and
- a second electrically-conductive type region penetrating through the photoelectric conversion layer and provided between adjacent ones of the first electrically-conductive type regions.
An electronic apparatus provided with an imaging device, the imaging device comprising:
- a photoelectric conversion layer provided common to a plurality of pixels and including a Group III-V semiconductor;
- first electrically-conductive type regions each of which is provided for a corresponding one of the pixels, and in which signal charges generated in the photoelectric conversion layer move;
- and
- a second electrically-conductive type region penetrating through the photoelectric conversion layer and provided between adjacent ones of the first electrically-conductive type regions.
A method of manufacturing a light-receiving device, the method comprising:
- forming a photoelectric conversion layer including a Group III-V semiconductor;
- forming a plurality of second electrically-conductive type regions penetrating through the photoelectric conversion layer;
- and
- forming, between adjacent ones of the second electrically-conductive type regions, a first electrically-conductive type region in which signal charges generated in the photoelectric conversion layer move.
Dependencies are inferred from the claim text.