Photoelectric sensor, fabricating method thereof and display device
AssigneeBoe Technology Group Co., Ltd.
InventorsYuzhen GUO, Xue DONG, Haisheng WANG, Chunwei WU, Yingming LIU, Rui XU
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Abstract
The application discloses a photoelectric sensor, a fabricating method thereof, and a display device. The method for fabricating the photoelectric sensor, includes: fabricating a thin film transistor (TFT) array and a photodiode array on a silicon substrate; transferring the TFT array onto a base substrate by a micro transfer process; and placing the photodiode array on the base substrate formed with the TFT array, in a manner that an orthographic projection of the photodiode array on the base substrate overlaps with an orthographic projection of the TFT array on the base substrate.
Claims15
A method for fabricating a photoelectric sensor, comprising:
- fabricating a thin film transistor (TFT) array and a photodiode array on a silicon substrate;
- transferring the TFT array onto a base substrate by a micro transfer process;
- and
- placing the photodiode array on the base substrate formed with the TFT array, in a manner that an orthographic projection of the photodiode array on the base substrate overlaps with an orthographic projection of the TFT array on the base substrate.
A photoelectric sensor, comprising:
- a base substrate;
- an electrical signal lead on the base substrate;
- a first bonding layer;
- a thin film transistor (TFT) array on the first bonding layer, wherein the TFT array electrically connects the electrical signal lead through a via hole penetrating the first bonding layer;
- a second bonding layer;
- a photodiode array on the second bonding layer, wherein the photodiode array electrically connects the TFT array through a via hole penetrating the second bonding layer, an orthographic projection of the photodiode array on the base substrate overlaps with an orthographic projection of the TFT array on the base substrate.
Dependencies are inferred from the claim text.