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US 2019/0198531 A1Published application
Butted Body Contact for SOI Transistor
AssigneepSemi Corporation
InventorSimon Edward Willard
Life of this patent
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Abstract
Systems, methods, and apparatus for an improved body tie construction are described. The improved body tie construction is configured to have a lower resistance body tie exists when the transistor is “off” (Vg approximately 0 volts). When the transistor is “on” (Vg>Vt), the resistance to the body tie is much higher, reducing the loss of performance associated with presence of body tie. Space efficient Body tie constructions adapted for cascode configurations are also described.
Claims20
(canceled)
An amplifier comprising:
- first and second transistors each defined by respective first and second body regions, the first and second transistors connected in series so that a source region of the first transistor and a drain region of the second transistor define a first common source/drain region,
- a first non-conductive isolation region that divides the second body region in two separate body regions;
- and
- at least one first body tab in contact with the first body region and extending across at least a portion of the first common source/drain region to make contact with at least one first body contact region that abuts the first non-conductive isolation region.
1 more element
Dependencies are inferred from the claim text.