Methods Of Forming An Array Of Elevationally-Extending Strings Of Memory Cells

A method of forming an array of memory cells, comprising:

• forming a stack comprising vertically-alternating insulative tiers and wordline tiers over polysilicon that is above and directly against metal material, the wordline tiers comprising silicon nitride, the insulative tiers comprising silicon dioxide;
• etching through the silicon nitride and the silicon dioxide at least to the polysilicon to form horizontally-elongated trenches;
• growing an oxide from the polysilicon exposed by the etching;
• forming memory cell strings in the stack, the memory cell strings comprising channel material;
• after the growing and after forming the strings comprising channel material, etching the silicon nitride from the wordline tiers;
• and
• after etching the silicon nitride, forming conductive material into the wordline tiers and forming therefrom gate regions of memory cells that are part of a wordline, the memory cells of the memory cell strings comprising a memory structure between the gate regions and the channel material.

A method of forming an array of memory cells, comprising:

• forming a stack comprising vertically-alternating insulative tiers and wordline tiers over polysilicon that is above and directly against metal material, the wordline tiers comprising silicon nitride, the insulative tiers comprising silicon dioxide;
• etching through the silicon nitride and the silicon dioxide at least to the polysilicon;
• growing an oxide from the polysilicon exposed by the etching;
• forming memory cell strings in the stack, the memory cell strings comprising channel material;
• after the growing and after forming the strings comprising channel material, etching the silicon nitride from the wordline tiers;
• and
• after etching the silicon nitride, forming conductive material into the wordline tiers and forming therefrom gate regions of memory cells that are part of a wordline, the memory cells of the memory cell strings comprising a memory structure between the gate regions and the channel material.

A method of forming an array of memory cells, comprising:

• forming a stack comprising vertically-alternating insulative tiers and wordline tiers over polysilicon that is above and directly against metal material, the wordline tiers comprising silicon nitride, the insulative tiers comprising silicon dioxide;
• etching through the silicon nitride and the silicon dioxide at least to the polysilicon to form horizontally-elongated trenches;
• growing an oxide from the polysilicon exposed by the etching;
• forming memory cell strings in the stack to comprise channel material, and silicon dioxide directly against the polysilicon;
• after the growing and after forming the strings comprising channel material, etching the silicon nitride from the wordline tiers;
• and
• after etching the silicon nitride, forming conductive material into the wordline tiers and forming therefrom gate regions of memory cells that are part of a wordline, the memory cells of the memory cell strings comprising a memory structure between the gate regions and the channel material.