Semiconductor memory device and method for manufacturing same
AssigneeToshiba Memory Corporation
InventorsJun FUJIKI, Shinya ARAI, Kotaro FUJII
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Abstract
A semiconductor memory device includes a semiconductor substrate including a diode formed in an upper layer portion of the semiconductor substrate, a first insulating film provided above the semiconductor substrate, a first conductive film provided above the first insulating film and coupled to the diode, a stacked body provided above the first conductive film, an insulator and an electrode film being stacked alternately in the stacked body, a semiconductor member piercing the stacked body and being connected to the first conductive film, and a charge storage member provided between the electrode film and the semiconductor member.
Claims20
A semiconductor memory device, comprising:
- a semiconductor substrate including a diode formed in an upper layer portion of the semiconductor substrate;
- a first insulating film provided above the semiconductor substrate;
- a first conductive film provided above the first insulating film and coupled to the diode;
- a stacked body provided above the first conductive film, an insulator and an electrode film being stacked alternately in the stacked body;
- a semiconductor member piercing the stacked body and being connected to the first conductive film;
- and
- a charge storage member provided between the electrode film and the semiconductor member.
A method for manufacturing a semiconductor memory device, comprising:
- forming a diode in an upper layer portion of a semiconductor substrate;
- forming a first insulating film above the semiconductor substrate;
- forming a first conductive film above the first insulating film, the first conductive film being coupled to the diode;
- forming a stacked body above the first conductive film by alternately forming a first insulating material film and a second insulating material film;
- forming a hole in the stacked body to reach the first conductive film by performing reactive ion etching;
- forming a charge storage member inside the hole;
- forming a semiconductor member inside the hole where the charge storage member is formed, the semiconductor member being connected to the first conductive film;
- and
- replacing the second insulating material film with an electrode film after the forming of the semiconductor member.
A method for manufacturing a semiconductor memory device, comprising:
- forming a diode in an upper layer portion of a semiconductor substrate;
- forming a first insulating film above the semiconductor substrate;
- forming a first conductive film above the first insulating film, the first conductive film being coupled to the diode;
- forming an intermediate insulating film above the first conductive film;
- forming a plug piercing the intermediate insulating film;
- forming a second conductive film above the intermediate insulating film, the second conductive film being coupled to the first conductive film via the plug;
- forming a stacked body above the second conductive film by alternately forming a first insulating material film and a second insulating material film;
- forming a hole in the stacked body, the second conductive film, and the second insulating film to reach the first conductive film by performing reactive ion etching;
- forming a charge storage member inside the hole;
- forming a semiconductor member inside the hole where the charge storage member is formed, the semiconductor member being connected to the first conductive film;
- subdividing the second conductive film into a first portion and a second portion after the forming of the hole, the first portion surrounding the semiconductor member, the second portion being connected to the plug;
- and
- replacing the second insulating material film with an electrode film after the forming of the semiconductor member.
Dependencies are inferred from the claim text.