Semiconductor memory

A semiconductor memory comprising:

• a plurality of conductors stacked with insulators being interposed therebetween;
• and
• a pillar through the plurality of conductors, the pillar including a first columnar section and a second columnar section on the first columnar section, and the pillar comprising portions that cross the respective conductors and that each function as part of a transistor,
• wherein the plurality of conductors include a first conductor that is closest to the first columnar section among the plurality of conductors through the second columnar section, and the first conductor includes a bending portion formed along the first columnar section.

A semiconductor memory comprising:

• a plurality of conductors stacked with insulators being interposed therebetween;
• and
• a plurality of pillars each passing through the plurality of conductors, the pillars each including a first columnar section, and a second columnar section above the first columnar section, the pillars each comprising portions that cross the respective conductors and that each function as part of a transistor, wherein
• the plurality of conductors include a first conductor among the plurality of conductors through the second columnar section,
• the plurality of pillars include a first pillar and a second pillar adjacent to each other, and
• a first distance, in a stacking direction of the plurality of conductors, between a substrate and an upper end of the first conductor at a position between the first and second pillars is smaller than a second distance in the stacking direction between the substrate and an upper end of a portion where the first conductor comes into contact with the first pillar.