Semiconductor device

A semiconductor device, comprising:

• a semiconductor base having an upper surface;
• a first plurality of conductive layers stacked in a first direction extending away from the upper surface of the base, each spaced in the first direction from an adjacent first conductive layer by no more than a first distance;
• a second plurality of conductive layers stacked in the first direction extending away from the upper surface of the base, each spaced in the first direction from an adjacent conductive layer by no more than a second distance, wherein the second distance is different than the first distance;
• an intermediate insulating layer extending between the first and second plurality of conductive layers;
• a first columnar portion comprising a first semiconductor layer extending in the first plurality of conductive layers in the first direction, and a first memory layer located between the first semiconductor layer and at least one of the plurality of first conductive layers;
• and
• a second columnar portion comprising a second semiconductor layer extending in the second plurality of conductive layers in the first direction, and a second memory layer located between the second semiconductor layer and at least one of the plurality of second conductive layers;
• wherein the widths of the first and second columnar portions, in a second direction crossing the first direction, are different.