Memory having a continuous channel
AssigneeMicron Technology, Inc.
InventorsLuan C. Tran, Hongbin Zhu, John D. Hopkins, Yushi Hu
Life of this patent
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Abstract
The present disclosure includes memory having a continuous channel, and methods of processing the same. A number of embodiments include forming a vertical stack having memory cells connected in series between a source select gate and a drain select gate, wherein forming the vertical stack includes forming a continuous channel for the source select gate, the memory cells, and the drain select gate, and removing a portion of the continuous channel for the drain select gate such that the continuous channel is thinner for the drain select gate than for the memory cells and the source select gate.
Claims20
An apparatus, comprising:
- memory cells connected in series between a source select gate and a drain select gate;
- and
- a hollow continuous channel for the source select gate, the memory cells, and the drain select gate, wherein a portion of the hollow continuous channel for the drain select gate is thinner than a portion of the hollow continuous channel for the memory cells.
A method of processing memory, comprising:
- forming a vertical stack having memory cells connected in series between a source select gate and a drain select gate;
- wherein forming the vertical stack includes forming a hollow continuous channel for the source select gate, the memory cells, and the drain select gate such that a portion of the hollow continuous channel for the drain select gate is thinner than a portion of the hollow continuous channel for the source select gate.
An apparatus, comprising:
- memory cells connected in series between a source select gate and a drain select gate;
- and
- a hollow continuous channel for the source select gate, the memory cells, and the drain select gate, wherein a doping concentration of a portion of the hollow continuous channel for the drain select gate is different than a doping concentration of a portion of the hollow continuous channel for the memory cells or a doping concentration of a portion of the hollow continuous channel for the source select gate.
Dependencies are inferred from the claim text.