Memory Cells, Memory Arrays, and Methods of Forming Memory Arrays
AssigneeMicron Technology, Inc.
InventorChanghan Kim
Life of this patent
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Abstract
Some embodiments include a memory cell having a conductive gate, and having a charge-blocking region adjacent the conductive gate. The charge-blocking region includes silicon oxynitride and silicon dioxide. A charge-storage region is adjacent the charge-blocking region. Tunneling material is adjacent the charge-storage region. Channel material is adjacent the tunneling material. The tunneling material is between the channel material and the charge-storage region. Some embodiments include memory arrays. Some embodiments include methods of forming assemblies (e.g., memory arrays).
Claims23
A memory cell, comprising:
- a conductive gate;
- a charge-blocking region adjacent the conductive gate;
- the charge-blocking region comprising silicon oxynitride and silicon dioxide;
- a charge-storage region adjacent the charge-blocking region;
- tunneling material adjacent the charge-storage region;
- and
- channel material adjacent the tunneling material, the tunneling material being between the channel material and the charge-storage region.
An assembly, comprising:
- a vertical stack of alternating insulative levels and wordline levels, the wordline levels comprising conductive regions;
- charge-storage regions adjacent the conductive regions;
- and
- charge-blocking regions between the charge-storage regions and the conductive regions;
- the charge-blocking regions comprising silicon dioxide extending vertically along silicon oxynitride;
- the silicon dioxide being between the silicon oxynitride and the charge-storage regions.
A memory array, comprising:
- a vertical stack of alternating insulative levels and wordline levels;
- channel material extending vertically along the stack;
- the wordline levels comprising conductive regions;
- the conductive regions being spaced from the channel material by gaps;
- the insulative levels comprising ledges above and below at least portions of the gaps;
- charge-storage regions within the gaps;
- the charge-storage regions being vertically spaced from one another by intervening regions of the ledges;
- and
- charge-blocking regions within the gaps and between the charge-storage regions and the conductive regions;
- the charge-blocking regions comprising silicon dioxide extending vertically along silicon oxynitride;
- the silicon dioxide being between the silicon oxynitride and the charge-storage regions.
23-33. (canceled)
Dependencies are inferred from the claim text.