Semiconductor device

A semiconductor device comprising:

• a semiconductor substrate;
• a first tap region having a first conductivity type disposed in the semiconductor substrate;
• a second tap region having a second conductivity type different from the first conductivity type, and disposed adjacent to the first tap region in a first direction in plan view;
• a first fin integrally formed of the semiconductor substrate on the first tap region and extended in a second direction crossing the first direction in a plan view;
• a second fin integrally formed of the semiconductor substrate on the second tap region and extended in the second direction;
• a first electrode formed on the first fin and the second fin via a first gate insulating film and a second gate insulating film respectively, and extended in the first direction;
• a second electrode different from the first electrode, formed on the first fin and the second fin via a third gate insulating film and a fourth gate insulating film respectively, and extended in the first direction;
• a first connection wiring layer formed on the first electrode and supplying a first potential to the first electrode;
• a second connection wiring layer formed on the second electrode and supplying a second potential different from the first potential to the second electrode;
• a first wiring layer formed between the first electrode and the second electrode in the second direction on the first tap region and extended in the first direction;
• and
• a second wiring layer disposed between the first electrode and the second electrode in the second direction on the second tap region and extended in the first direction.