Semiconductor device

Abstract

A semiconductor device includes first, second, and third transistors on a substrate and having different threshold voltages from each other, each of the first, second, and third transistors including: a gate insulating layer, a first work function metal layer, and a second work function metal layer. The first work function metal layer of the first transistor may include a first sub-work function layer, the first work function metal layer of the second transistor may include a second sub-work function layer, the first work function metal layer of the third transistor may include a third sub-work function layer, and the first, second, and third sub-work function layers may have different work functions from each other.

Dependencies are inferred from the claim text.