Integrated circuit device and method of manufacturing the same

A method of manufacturing an integrated circuit device, the method comprising:

• forming a first fin-type active region and a first device isolation film covering both lower sidewalls of the first fin-type active region in a first region of a substrate;
• forming a second fin-type active region and a second device isolation film covering both lower sidewalls of the second fin-type active region in a second region of the substrate;
• forming a spacer layer covering the first fin-type active region, the first device isolation film, the second fin-type active region, and the second device isolation film;
• forming a first recess in the first fin-type active region;
• forming first fin insulating spacers covering both upper sidewalls of the first fin-type active region over the first device isolation film by etching the spacer layer in the first region;
• forming a first source/drain region to fill the first recess;
• forming a preliminary recess in the second fin-type active region,
• forming second fin insulating spacers covering both upper sidewalls of the second fin-type active region over the second device isolation film by etching the spacer layer in the second region,
• forming a second recess by selectively removing a portion of the second fin-type active region exposed by the preliminary recess so that the second fin insulating spacers are spaced apart from the second fin-type active region;
• and
• forming a second source/drain region to fill the second recess.

A method of manufacturing an integrated circuit device, the method comprising:

• forming a first fin-type active region in a first region of a substrate;
• forming a second fin-type active region in a second region of the substrate;
• forming a first recess in the first fin-type active region;
• forming first fin insulating spacers covering both upper sidewalls of the first fin-type active region;
• forming a first source/drain region to fill the first recess;
• forming a preliminary recess in the second fin-type active region;
• forming second fin insulating spacers covering both upper sidewalls of the second fin-type active region;
• forming a second recess by selectively removing a portion of the second fin-type active region exposed by the preliminary recess so that the second fin insulating spacers are spaced apart from the second fin-type active region;
• and
• forming a second source/drain region to fill the second recess.