Power module and power converter

A power module comprising:

• first and second semiconductor chips each including a diode and a transistor that are electrically connected to each other, the first and second semiconductor chips being electrically connected in parallel;
• and
• a substrate on which the first and second semiconductor chips are mounted,
• wherein a gate electrode of the transistor that each of the first and second semiconductor chips has is electrically connected to a gate resistance, and
• wherein, of the first and second semiconductor chips, the gate resistance that is electrically connected to the semiconductor chip whose current value is smaller when a predetermined voltage is applied in the forward direction of the diode, is greater than the gate resistance that is electrically connected to the semiconductor chip whose current value is larger when the predetermined voltage is applied in the forward direction of the diode.

A power converter comprising:

• a first line;
• a second line whose potential is lower than that of the first line;
• a high-side transistor unit provided between the first line and the second line, the high-side transistor unit being electrically connected to the first and second lines;
• and
• a low-side transistor unit provided between the first line and the second line, the low-side transistor unit being electrically connected to the first and second lines and also electrically connected in series to the high-side transistor unit,
• wherein a plurality of transistors are electrically connected in parallel to each of the high-side transistor unit and the low-side transistor unit, each of the transistors being electrically connected to a diode, in which the gate electrode of each of the transistors is electrically connected to a gate resistance, and
• wherein in each of the high-side transistor unit and the low-side transistor unit, the gate resistance that is electrically connected to a transistor whose current value is smaller when a predetermined voltage is applied in the forward direction of the diode, is greater than the gate resistance that is electrically connected to a transistor whose current value is larger when the predetermined voltage is applied in the forward direction of the diode.