Semiconductor device and method for manufacturing the same

A semiconductor device, comprising:

• a semiconductor substrate;
• a multilayer wiring layer formed over the semiconductor substrate and having a plurality of interlayer insulating films and a plurality of wiring layers;
• a plurality of first pad electrodes formed over an uppermost interlayer insulating film among the interlayer insulating films and, at the same time, formed in an uppermost wiring layer among the wiring layers:
• an insulating film formed over each of the first pad electrodes and over the interlayer insulating film in the uppermost layer and including a non-organic material;
• a first organic insulating film formed over the insulating film;
• a plurality of first openings provided in the first organic insulating film and in the insulating film and each of which reaching each of the first pad electrodes;
• a plurality of re-wirings formed over the first organic insulating film and inside each of the first openings, respectively;
• and
• a second organic insulating film formed over each of the re-wirings and over the first organic insulating film,
• wherein each of the re-wirings includes a first barrier metal film and a first conductive film formed over the first barrier metal film,
• wherein the re-wirings have a first wiring and a second wiring neighboring to each other,
• wherein, in a plan view, in the first organic insulating film between the first re-wiring and the second re-wiring, a groove penetrating the first organic insulating film and reaching the insulating film is formed, and
• wherein the second organic insulating film is embedded inside the groove.

A method for manufacturing a semiconductor device, comprising the steps of:

• (a) providing a semiconductor substrate;
• a multilayer wiring layer formed over the semiconductor substrate and having a plurality of interlayer insulating films and a plurality of wiring layers;
• a plurality of first pad electrodes formed over an upper interlayer insulating film among the interlayer insulating films and in an uppermost wiring layer among the wiring layers;
• and an insulating film formed over each of the first pad electrodes and over the interlayer insulating film in the uppermost layer and formed from a non-organic material;
• (b) forming a first organic insulating film over the insulating film;
• (c) forming a plurality of first openings reaching the first pad electrodes, respectively, and a groove reaching the insulating film in the first organic insulating film;
• (d) forming first barrier metal films over the first organic insulating film, inside each of the first openings, and inside the groove;
• (e) forming a first resist pattern over the first barrier metal film;
• (f) forming a plurality of first conductive films over the barrier metal film in an area exposed from the first resist pattern;
• (g) after the step (f), removing the first resist pattern;
• and
• (h) after the step (g), by removing the first barrier metal film exposed from the first conductive films, forming a plurality of re-wirings each including the first conductive film and the first barrier metal film left under the first conductive film,
• wherein the re-wirings include a first re-wiring and a second re-wiring neighboring to each other, and
• wherein, in a plan view, the groove is formed in an area between the first re-wiring and the second re-wiring.