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US 2019/0198465 A1Published application
Compensation Device for Transistors
AssigneeInfineon Technologies AG
InventorsDavid Seebacher, Andrea Del Chiaro, Peter Singerl, Ji Zhao
Life of this patent
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Abstract
Devices including a transistor having a parasitic capacitance between a control terminal and a load terminal of a first type are provided. Furthermore, the devices include advantageously arranged inductances which are electromagnetically coupled to one another and are configured at least partly to compensate for an effect of the parasitic capacitance in a range around a resonant frequency.
Claims10
A device, comprising:
- a transistor having a control terminal, a load terminal of a first type and a load terminal of a second type,
- wherein the transistor has a parasitic capacitance between the control terminal and the load terminal of the first type, a first inductance conductively connected to the control terminal, and a second inductance conductively connected to the load terminal of the first type,
- wherein the first inductance is electromagnetically coupled to the second inductance,
- wherein the first inductance, the second inductance and the electromagnetic coupling are configured at least partly to compensate for an effect of the parasitic capacitance in a range around a resonant frequency.
1 more element
A device, comprising
- a transistor having a control terminal area and a load terminal area;
- a first bond wire conductively connected to the control terminal area and having a first bond wire inductance;
- a second bond wire conductively connected to the load terminal area and having a second bond wire inductance;
- and
- a third bond wire having a beginning and an end,
- wherein the first bond wire is electromagnetically coupled to a first part of the third bond wire,
- wherein the second bond wire is electromagnetically coupled to a second part of the third bond wire,
- wherein the third bond wire is electrically insulated from the first bond wire and the second bond wire,
- wherein the beginning and the end of the third bond wire are conductively connected to a reference potential.
6 more elements
A device, comprising
- a transistor electrically conductively connected to a control terminal area and a load terminal area;
- a control contact area;
- a load contact area;
- a first plurality of bond wires electrically conductively connected to the control terminal area and the control contact area;
- a second plurality of bond wires electrically conductively connected to the load terminal area and the load contact area;
- and
- a third plurality of bond wires each having a beginning and an end,
- wherein the beginning and the end of each bond wire of the third plurality of bond wires is conductively connected to a reference potential,
- wherein the third plurality of bond wires is electrically insulated from the first plurality of bond wires and the second plurality of bond wires,
- wherein the third plurality of bond wires and the first plurality of bond wires each have a first mutual inductance,
- wherein the third plurality of bond wires and the second plurality of bond wires each have a second mutual inductance.
8 more elements
Dependencies are inferred from the claim text.