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US 2019/0198464 A1Published application
Semiconductor device
AssigneeMurata Manufacturing Co., Ltd.
InventorsTakayuki TSUTSUI, Isao OBU
Life of this patent
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Abstract
A plurality of unit transistors that are connected in parallel to each other are formed on a substrate. In addition, a ground bump is provided on the substrate. A plurality of first capacitors are each provided for a corresponding one of the plurality of unit transistors and each connect an output electrode of the corresponding one of the plurality of unit transistors and the ground bump to each other.
Claims20
A semiconductor device comprising:
- a plurality of unit transistors provided on a substrate, the plurality of unit transistors each including an output electrode for outputting an output signal, an input electrode for inputting an input signal, and a common electrode, the plurality of unit transistors being connected in parallel to each other;
- a ground bump provided on the substrate;
- and
- a plurality of first capacitors each provided for a corresponding one of the plurality of unit transistors, the plurality of first capacitors each connecting the output electrode of the corresponding one of the plurality of unit transistors and the ground bump to each other.
1 more element
Dependencies are inferred from the claim text.